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NVMFS5844NL 데이터시트 PDF




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NVMFS5844NL 데이터시트, 핀배열, 회로
NTMFS5844NL,
NVMFS5844NL
Power MOSFET
60 V, 61 A, 12 mW, Single NChannel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AECQ101 Qualified and PPAP Capable
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current Limited by Package
(Note 4)
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxPkg
60
"20
61
43
107
54
11.2
8.0
3.7
1.8
247
80
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
55 to
175
°C
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 31 A, L = 0.1 mH, RG = 25 W)
IS 60 A
EAS 48 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Notes 2, 3)
RYJmb
1.4 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
12 mW @ 10 V
16 mW @ 4.5 V
D (5)
ID MAX
61 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5844NL
S AYWZZ
G
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
D
D
ORDERING INFORMATION
Device
Package
Shipping
NTMFS5844NLT1G DFN5 1500/Tape & Reel
(PbFree)
NVMFS5844NLT1G DFN5 1500/Tape & Reel
(PbFree)
NVMFS5844NLT3G DFN5 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 4
1
Publication Order Number:
NTMFS5844NL/D
Free Datasheet http://www.datasheet4u.com/




NVMFS5844NL pdf, 반도체, 판매, 대치품
NTMFS5844NL, NVMFS5844NL
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
VGS = 0 V
TJ = 25°C
Ciss
1000
800
600
400 Coss
200
0 Crss
0 10 20 30 40 50 60
DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
VDD = 48 V
ID = 10 A
VGS = 4.5 V
100
tf
tr
10
td(off)
td(on)
10
QT
8
6
4
Qgs Qgd
2 VDS = 48 V
ID = 10 A
0 TJ = 25°C
0 5 10 15 20 25 30
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource Voltage vs. Total
Charge
40
VGS = 0 V
TJ = 25°C
30
20
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 10 V
Single Pulse
TC = 25°C
100 ms 10 ms
10 1 ms
10 ms
1 RDS(on) Limit
Thermal Limit
dc
Package Limit
0.1
0.1
1
10 100
VDS, DRAISN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
40
30
20
10
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
Free Datasheet http://www.datasheet4u.com/

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