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Número de pieza | 2SC4957 | |
Descripción | NPN EPITAXIAL SILICON RF TRANSISTOR | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC4957 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.datasheet4u.com/
1 page 2SC4957
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
180 mW
Free Air
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHZ
0.4
0.3
100
0.2
0 50 100 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 3 V
40
30
20
10
0.1
0.5
12
5 10
Collector to Base Voltage VCB (V)
20
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
500 µA
50
400 µA
40
300 µA
30
200 µA
20
IB = 100 µA
10
0 0.5 1.0
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
VCE = 5 V
100
0 123456
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
f = 2 GHZ
12
VCE = 5 V
10 VCE = 3 V
8
VCE = 1 V
6
0
0.1 0.2 0.5 1 2
5 10 20
Collector Current IC (mA)
50 100
Remark The graphs indicate nominal characteristics.
4
2
0.5 1
2
5 10 20
Collector Current IC (mA)
50
Data Sheet PU10520EJ01V0DS
3
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SC4957.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC495 | (2SC495 / 2SC496) Silicon NPN Epitaxial Transistors | Toshiba |
2SC4953 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | Panasonic Semiconductor |
2SC4954 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD | NEC |
2SC4954-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD | NEC |
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