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BVSS138L PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BVSS138L
기능 Power MOSFET
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BVSS138L 데이터시트, 핀배열, 회로
BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
NChannel SOT23
Typical applications are DCDC converters, power management in
portable and batterypowered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Low Threshold Voltage (VGS(th): 0.5 V1.5 V) Makes it Ideal for
Low Voltage Applications
Miniature SOT23 Surface Mount Package Saves Board Space
BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
http://onsemi.com
200 mA, 50 V
RDS(on) = 3.5 W
NChannel
3
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
50
± 20
200
800
225
55 to 150
Vdc
Vdc
mA
mW
°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
3
1
2
SOT23
CASE 318
STYLE 21
MARKING
DIAGRAM
J1 M G
G
1
J1 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BSS138LT1G
SOT23 3000 / Tape & Reel
(PbFree)
BVSS138LT1G SOT23 3000 / Tape & Reel
(PbFree)
BSS138LT3G
SOT23 10,000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 Rev. 8
1
Publication Order Number:
BSS138LT1/D
Free Datasheet http://www.datasheet4u.com/




BVSS138L pdf, 반도체, 판매, 대치품
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
10
9 VGS = 2.5 V
8
150°C
7
6
5 25°C
4
3 -55°C
2
1
0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 7. OnResistance versus Drain Current
8
VGS = 2.75 V
7
6
150°C
5
4
25°C
3
2 -55°C
1
0
0.05 0.1
0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 8. OnResistance versus Drain Current
6
5.5 VGS = 4.5 V
5
4.5
4
3.5
3
2.5
2
1.5
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
ID, DRAIN CURRENT (AMPS)
150°C
25°C
-55°C
0.4 0.45
0.5
Figure 9. OnResistance versus Drain Current
1
0.1
TJ = 150°C 25°C
-55°C
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
1.2
4.5
VGS = 10 V
4
150°C
3.5
3
2.5 25°C
2
1.5 -55°C
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
ID, DRAIN CURRENT (AMPS)
Figure 10. OnResistance versus Drain
Current
120
100
80
60
Ciss
40
Coss
20
Crss
00
5
10 15 20 25
Figure 12. Capacitance
http://onsemi.com
4
Free Datasheet http://www.datasheet4u.com/

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부품번호상세설명 및 기능제조사
BVSS138L

Power MOSFET

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