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부품번호 | NE3519M04 기능 |
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기능 | N-channel GaAs HJ-FET | ||
제조업체 | Renesas | ||
로고 | |||
PreliminaryData Sheet
NE3519M04
R09DS0008EJ0100
Rev.1.00
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier Oct 21, 2010
FEATURES
• Low noise figure and high associated gain
NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, etc.)
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE3519M04-T2
NE3519M04-T2B
NE3519M04-T2-A
NE3519M04-T2B-A
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
3 kpcs/reel
15 kpcs/reel
V85 • Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage VGS −3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
200
150
Channel Temperature
Tch +150
Storage Temperature
Tstg −65 to +150
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 1 of 11
Free Datasheet http://www.datasheet4u.com/
NE3519M04
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
f = 2.0 GHz, VDS = 2 V
1.4
20
18
1.2 Ga
16
1.0 14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
0 5 10 15 20 25 30
Drain Current ID (mA)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
1.6
f = 2.0 GHz, ID = 10 mA
1.4
20
18
1.2 Ga
16
1.0 14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
1.0 1.5 2.0 2.5 3.0 3.5
Drain to Source Voltage VDS (V)
Remark The graphs indicate nominal characteristics.
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
f = 2.5 GHz, VDS = 2 V
1.4
20
18
1.2 Ga
1.0
16
14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
0 5 10 15 20 25 30
Drain Current ID (mA)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
1.6
f = 2.5 GHz, ID = 10 mA
1.4
20
18
1.2 16
Ga
1.0 14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
1.0 1.5 2.0 2.5 3.0 3.5
Drain to Source Voltage VDS (V)
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 4 of 11
Free Datasheet http://www.datasheet4u.com/
4페이지 NE3519M04
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 7 of 11
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
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NE3519M04 | N-channel GaAs HJ-FET | Renesas |
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