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RD2004JN 데이터시트 PDF




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RD2004JN 데이터시트, 핀배열, 회로
Ordering number : ENA1486
RD2004JN
SANYO Semiconductors
DATA SHEET
RD2004JN
Diffused Junction Silicon Diode
Low VF High-Speed Switching Diode
Features
High breakdown voltage (VRRM=400V).
High reliability.
Fast forward / reverse recovery time.
Low noise at the time of reverse recovery.
Attachment workability is good by Mica-less package.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Sine wave, 10ms 1pulse
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr1
trr2
Rth(j-c)
Conditions
IR=1mA
IF=20A
VR=400V
IF=10A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction-Case : Smoothed DC
Ratings
400
20
180
150
--55 to +150
Unit
V
A
A
°C
°C
min
400
Ratings
typ
1.3
44
20
max
1.5
100
50
4.0
Unit
V
V
μA
ns
ns
°C / W
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
52709SA MS IM TC-00001979 No. A1486-1/3
Free Datasheet http://www.datasheet4u.com/





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관련 데이터시트

부품번호상세설명 및 기능제조사
RD2004JN

Low VF - High-Speed Switching Diode

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Ultrahigh-Speed Switching Diode

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