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PDF HBTA6A60 Data sheet ( Hoja de datos )
| Número de pieza | HBTA6A60 | |
| Descripción | INNER INSULATED TYPE TRIAC | |
| Fabricantes | SHANTOU HUASHAN | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HBTA6A60
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=6A)
* High Commutation dv/dt
*Isolation Voltage VISO=2500V AC
General Description
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PGM Peak Gate Power Dissipation
VDRM Repetitive Peak Off-State Voltage
IT RMS
R.M.S On-State Current Tc=94
VGM Peak Gate Voltage
IGM Peak Gate Current
ITSM Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
VISO RMS Isolation Breakdown Voltage
Electrical Characteristics Ta=25
40~150
40~125
5W
600V
6A
10V
2.0A
60/66A
2500V
Symbol
Items
Min Max Unit
Conditions
IDRM Repetitive Peak Off-State Current
VD=VDRM,Single Phase,Half
1.0 mA
Wave, TJ=125
VTM Peak On-State Voltage
1.6 V IT=8A, Inst. Measurement
I+GT1 Gate Trigger Current
10 mA VD=6V, RL=10 ohm
I-GT1
I-GT3
V+GT1
V-GT1
Gate Trigger Current
Gate Trigger Current
Gate Trigger Voltage
Gate Trigger Voltage
10 mA VD=6V, RL=10 ohm
10 mA VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
V-GT3 Gate Trigger Voltage
1.5 V VD=6V, RL=10 ohm
VGD Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
(dv/dt)c Voltage at Commutation
0.2
5.0
V TJ=125 ,VD=1/2VDRM
V/µS TJ=125 ,VD=2/3VDRM (di/dt)c=-3A/ms
IH Holding Current
Rth(j-c) Thermal Resistance
10 mA
3.8 /W Junction to case
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HBTA6A60.PDF ] | |
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