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PDF STD18N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STD18N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB18N65M5, STD18N65M5
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET
in D²PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB18N65M5
STD18N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.22 Ω 15 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
2
1
D2PAK
3
TAB
23
1
DPAK
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STB18N65M5
STD18N65M5
Marking
18N65M5
Package
D2PAK
DPAK
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 023446 Rev 1
1/18
www.st.com
18
Free Datasheet http://www.datasheet4u.com/
1 page  
STB18N65M5, STD18N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td (V)
tr (V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 9.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Min.
-
Typ.
36
7
9
11
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 15 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
15 A
60 A
1.5 V
290 ns
3.4 µC
23.5 A
352 ns
4 µC
24 A
Doc ID 023446 Rev 1
5/18
Free Datasheet http://www.datasheet4u.com/
5 Page 
STB18N65M5, STD18N65M5
Figure 23. D²PAK (TO-263) drawing
Package mechanical data
Figure 24. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
3.50
a. All dimensions are in millimeters
Doc ID 023446 Rev 1
Footprint
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| PDF Descargar | [ Datasheet STD18N65M5.PDF ] | |
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