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PDF STD18N55M5 Data sheet ( Hoja de datos )
| Número de pieza | STD18N55M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB18N55M5, STD18N55M5
STF18N55M5, STP18N55M5
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET
in D²PAK, DPAK, TO-220FP and TO-220
Features
Order codes
STB18N55M5
STD18N55M5
STF18N55M5
STP18N55M5
VDSS
@TJmax
550 V
RDS(on)
max
< 0.24 Ω
■ DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
ID
13 A
Application
Switching applications
Description
The devices are N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
1
D²PAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB18N55M5
STD18N55M
STF18N55M5
STP18N55M5
Marking
18N55M5
Package
D²PAK
DPAK
TO-220FP
TO-220
March 2011
Doc ID 17078 Rev 2
Packaging
Tape and reel
Tube
1/22
www.st.com
22
Free Datasheet http://www.datasheet4u.com/
1 page  
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(off)
tr
tc
tf
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
VDD = 400 V, ID = 9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18, Figure 23)
Min. Typ. Max Unit
29 ns
9.5 ns
--
23 ns
13 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 13 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
13 A
52 A
1.5 V
238 ns
2.8 µC
23.5 A
278 ns
3.3 µC
24 A
Doc ID 17078 Rev 2
5/22
Free Datasheet http://www.datasheet4u.com/
5 Page 
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Package mechanical data
Table 8. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 24. TO-220FP drawing
L7
A
B
Dia
L6
mm
Typ.
16
D
L5
F1 F2
H
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
L2
L3
Doc ID 17078 Rev 2
L4
7012510_Rev_K
11/22
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet STD18N55M5.PDF ] | |
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