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부품번호 | STP18N55M5 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 22 페이지수
STB18N55M5, STD18N55M5
STF18N55M5, STP18N55M5
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET
in D²PAK, DPAK, TO-220FP and TO-220
Features
Order codes
STB18N55M5
STD18N55M5
STF18N55M5
STP18N55M5
VDSS
@TJmax
550 V
RDS(on)
max
< 0.24 Ω
■ DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
ID
13 A
Application
Switching applications
Description
The devices are N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
1
D²PAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB18N55M5
STD18N55M
STF18N55M5
STP18N55M5
Marking
18N55M5
Package
D²PAK
DPAK
TO-220FP
TO-220
March 2011
Doc ID 17078 Rev 2
Packaging
Tape and reel
Tube
1/22
www.st.com
22
Free Datasheet http://www.datasheet4u.com/
Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 6.5 A
Min. Typ. Max. Unit
550 V
1 µA
100 µA
100 nA
3 4 5V
0.18 0.24 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1352
pF
- 38 - pF
3.7 pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 440 V
- 98 - pF
- 35 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 1.7 - Ω
Qg Total gate charge
VDD = 440 V, ID = 6.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
31 nC
- 6.3 - nC
14 nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22
Doc ID 17078 Rev 2
Free Datasheet http://www.datasheet4u.com/
4페이지 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Figure 8. Output characteristics
ID
(A)
VGS=10V
20
Figure 9.
AM08664v1
7.5V
ID
(A)
7V
6.5V
20
Transfer characteristics
VDS=20V
15 15
6V
10 10
AM08665v1
5 5.5V
5V
0
0 5 10 15 VDS(V)
5
0
3 4 5 6 7 8 9 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
VGS
(V)
12
VDS
10
VDD=440V
ID=6.5A
AM08666v1
VGS
450
400
350
RDS(on)
(Ω)
0.22
0.20
VGS=10V
AM08667v1
8 300 0.18
250
6
0.16
200
4 150
100
2
50
00
0 5 10 15 20 25 30 35 Qg(nC)
0.14
0.12
0.10
0 2 4 6 8 10 12 ID(A)
Figure 12. Capacitance variations
C
(pF)
10000
1000
100
10
1
0.1
1
10 100
Figure 13. Output capacitance stored energy
AM08668v1
Eoss
(µJ)
AM08669v1
4.0
Ciss
3.5
3.0
Coss
Crss
VDS(V)
2.5
2.0
1.5
1.0
0.5
0
0 100 200 300 400 500 VDS(V)
Doc ID 17078 Rev 2
7/22
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
STP18N55M5 | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |