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PDF JDV2S19S Data sheet ( Hoja de datos )
| Número de pieza | JDV2S19S | |
| Descripción | VCO | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de JDV2S19S (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S19S
VCO for the UHF band
• High capacitance ratio: C1V/C4V = 1.8 (typ.)
• Low series resistance: rs = 0.35 Ω (typ.)
• This device is suitable for use in a small-size tuner.
JDV2S19S
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 150 °C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯
⎯⎯
3
3.46 ⎯ 3.87
1.83 ⎯ 2.13
1.74 ⎯ 1.91
⎯ 0.35 0.47
V
nA
pF
⎯
Ω
M
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
1 page | ||
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| PDF Descargar | [ Datasheet JDV2S19S.PDF ] | |
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