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PDF PMDXB950UPE Data sheet ( Hoja de datos )
| Número de pieza | PMDXB950UPE | |
| Descripción | dual P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMDXB950UPE
20 V, dual P-channel Trench MOSFET
10 September 2013
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
• Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -500 mA; Tj = 25 °C
resistance
[1]
Min Typ Max Unit
--
-8 -
--
-20
8
-500
V
V
mA
- 1.02 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
PMDXB950UPE
20 V, dual P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
[2] -
-
410 475 K/W
285 330 K/W
27 31 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103 aaa-006902
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
0 0.01
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDXB950UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 September 2013
© NXP N.V. 2013. All rights reserved
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NXP Semiconductors
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
PMDXB950UPE
20 V, dual P-channel Trench MOSFET
SOT1216
0.35
1.3 1.2 0.5
0.35
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.3 (6x)
1
1.35
0.25
0.6 1.1
0.25
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PMDXB950UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 September 2013
sot1216_fr
© NXP N.V. 2013. All rights reserved
11 / 15
Free Datasheet http://www.datasheet4u.com/
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