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PDF PMXB350UPE Data sheet ( Hoja de datos )
| Número de pieza | PMXB350UPE | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMXB350UPE
20 V, P-channel Trench MOSFET
19 September 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection 1 kV HBM
• Drain-source on-state resistance RDSon = 100 mΩ
3. Applications
• High-side load switch and charging switch for portable devices
• Power management in battery driven portables
• LED driver
• DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -1.2 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
resistance
- 350 447 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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Free Datasheet http://www.datasheet4u.com/
1 page  
NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
103 aaa-009265
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0
10
10-3
0.02
0.01
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-009266
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.5
0.33 0.25
0.2 0.1
0.05
0
10
10-3
0.02
0.01
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
5 / 15
Free Datasheet http://www.datasheet4u.com/
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
PMXB350UPE
20 V, P-channel Trench MOSFET
SOT1215
0.45 (2x)
0.35 (2x)
1.2
0.3
1.1
0.4
0.75
0.25 (2x)
0.5
1.5 1.4 0.4
0.5
0.3 0.4
0.5 1.3
0.3 0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215)
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
sot1215_fr
© NXP N.V. 2013. All rights reserved
11 / 15
Free Datasheet http://www.datasheet4u.com/
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