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부품번호 | PMXB360ENEA 기능 |
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기능 | N-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PMXB360ENEA
80 V, N-channel Trench MOSFET
16 September 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Tin-plated 100 % solderable side pads for optical solder inspection
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• AEC-Q101 qualified
3. Applications
• Relay driver
• Power management in automotive and industrial applications
• LED driver
• DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 1.1 A; Tj = 25 °C
Min Typ Max Unit
- - 80 V
-20 -
20 V
[1] - - 1.1 A
- 345 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
120
Pder
(%)
80
017aaa123
PMXB360ENEA
80 V, N-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
10
ID
(A)
1
Limit RDSon = VDS/ID
aaa-009009
tp = 10 µs
tp = 100 µs
DC; Tsp = 25 °C
10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
IDM = single pulse
1
tp = 1 ms
tp = 10 ms
tp = 100 ms
10
VDS (V)
102
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1] -
271 312 K/W
[2] -
102 117 K/W
PMXB360ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
4 / 15
Free Datasheet http://www.datasheet4u.com/
4페이지 NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
4.4
ID
(A)
3.3
2.2
1.1
10 V
4.5 V
aaa-009010
3.6 V
3.3 V
3V
2.8 V
10-3
ID
(A)
10-4
10-5
aaa-009011
min typ
max
VGS = 2.5 V
0
012345
VDS (V)
Tj = 25 °C
10-6
0
1
Tj = 25 °C; VDS = 10 V
23
VGS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
1400
RDSon
(mΩ)
2.8 V
3V
3.3 V
aaa-009012
3.6 V
1400
RDSon
(mΩ)
1200
aaa-009013
1050
1000
800 Tj = 150 °C
700
4.5 V
600
400
350 VGS = 10 V
Tj = 25 °C
200
0
0 1.6
Tj = 25 °C
3.2 4.8
ID (A)
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
ID = 1.1 A
4
8 12
VGS (V)
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB360ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
7 / 15
Free Datasheet http://www.datasheet4u.com/
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