|
|
|
부품번호 | PQMD12 기능 |
|
|
기능 | NPN/PNP resistor-equipped transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
PQMD12
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
24 July 2013
Product data sheet
1. General description
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• 100 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Low package height of 0.37 mm
• Reduces component count
• Reduces pick and place costs
• AEC-Q101 qualified
3. Applications
• Low current peripheral driver
• Control of IC inputs
• Replaces general-purpose transistors in digital applications
• Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
IO output current
Per transistor; for the PNP transistor with negative polarity
R1
R2/R1
resistance 1
resistance ratio
Tamb = 25 °C
Min Typ Max Unit
- - 50 V
- - 100 mA
33 47
0.8 1
61 kΩ
1.2
Scan or click this QR code to view the latest information for this product
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
PQMD12
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
in free air
Min Typ Max Unit
[1] - - 543 K/W
[1] - - 357 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
aaa-007378
1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A; Tamb = 25 °C
current
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C
current
VCE = 30 V; IB = 0 A; Tamb = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A; Tamb = 25 °C
current
PQMD12
All information provided in this document is subject to legal disclaimers.
Product data sheet
24 July 2013
Min Typ Max Unit
- - 100 nA
- - 1 µA
- - 5 µA
- - 90 µA
© NXP N.V. 2013. All rights reserved
4 / 13
Free Datasheet http://www.datasheet4u.com/
4페이지 NXP Semiconductors
103
hFE
102
10
PQMD12
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
006aac758
(1)
(2)
(3)
-1
VCEsat
(V)
-10-1
006aac759
(1)
(2)
(3)
1
-10-1
-1
VCE = -5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
-10 -102
IC (mA)
-10-2
-10-1
-1
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
-10 -102
IC (mA)
Fig. 10. PNP transistor: DC current gain as a function of Fig. 11. PNP transistor: Collector-emitter saturation
collector current; typical values
voltage as a function of collector current;
typical values
-10
006aac760
-10
006aac761
VI(on)
(V)
-1
(1)
(2)
(3)
VI(off)
(V)
-1
(1)
(2)
(3)
-10-1
-10-1
-1
VCE = -0.3 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
-10 -102
IC (mA)
Fig. 12. PNP transistor: On-state input voltage as a
function of collector current; typical values
-10-1
-10-1
-1
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
IC (mA)
-10
Fig. 13. PNP transistor: Off-state input voltage as a
function of collector current; typical values
PQMD12
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2013
© NXP N.V. 2013. All rights reserved
7 / 13
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ PQMD12.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PQMD12 | NPN/PNP resistor-equipped transistors | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |