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부품번호 | TK80E06K3A 기능 |
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기능 | Silicon N-channel MOS | ||
제조업체 | Toshiba | ||
로고 | |||
MOSFETs Silicon N-channel MOS (U-MOS )
TK80E06K3A
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK80E06K3A
1: Gate
2: Drain (heatsink)
3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 60 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
80 A
Drain current (pulsed)
(Note 1)
IDP
240
Power dissipation
(Tc = 25)
PD 125 W
Single-pulse avalanche energy
(Note 2)
EAS
76 mJ
Avalanche current
IAR 80 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-08-09
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
7. Marking
TK80E06K3A
Fig. 7.1 Marking
4 2011-08-09
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
4페이지 TK80E06K3A
Fig. 8.12 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
7 2011-08-09
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ TK80E06K3A.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TK80E06K3A | Silicon N-channel MOS | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |