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PDF EM6M2 Data sheet ( Hoja de datos )
| Número de pieza | EM6M2 | |
| Descripción | 1.2V Drive NchPch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EM6M2 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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1.2V Drive Nch+Pch MOSFET
EM6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
EMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (1.2V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
Each lead has same dimensions
Abbreviated symbol : M02
zInner circuit
(6) (5) (4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
EM6M2
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
VDSS
VGSS
ID
IDP∗1
PD∗2
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw 10µs, Duty cycle 1%
∗2 Each terminal mounted on a recommended land
∗1
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
Limits
Tr1 : N-ch Tr2 : P-ch
20 −20
± 8 ±10
±200
±200
±400
±400
150
120
150
−55 to +150
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.07 - Rev.A
Free Datasheet http://www.datasheet4u.com/
1 page  
EM6M2
P-ch
zElectrical characteristic curve
0.2 Ta=25°C
Pulsed
VGS= -10.0V
0.15
VGS= -4.5V
VGS= -3.2V
VGS= -2.5V
0.1 VGS= -2.0V
VGS= -1.5V
VGS= -1.8V
0.05
VGS= -1.2V
VGS= -1.0V
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics(Ⅰ)
Data Sheet
0.2
VGS= -4.5V
Ta=25°C
Pulsed
0.15 VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
0.1 VGS= -1.2V
0.05
VGS= -1.0V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical output characteristics(Ⅱ)
1 VDS= -10V
Pulsed
0.1
Ta= 125°C
0.01 Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.001
0.0001
0
0.5
1 1.5
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
10000 Ta=25°C
Pulsed
1000
100
0.001
0.01
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.1
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ι )
1
10000 VGS= -4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Π )
10000 VGS= -2.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
1
10000
VGS= -1.8V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10000 VGS= -1.5V
Pulsed
10000 VGS= -1.2V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
5/7
2009.07 - Rev.A
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EM6M2.PDF ] | |
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