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MMBT2907AL 데이터시트 PDF




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기능 General Purpose Transistors PNP Silicon
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MMBT2907AL 데이터시트, 핀배열, 회로
MMBT2907AL,
SMMBT2907AL
General Purpose Transistors
PNP Silicon
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak (Note 3)
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
60
60
5.0
600
1200
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation Heat Spreader
or equivalent, (Note 4) @TA = 25°C
RqJA
PD
417 °C/W
350 mW
Thermal Resistance, JunctiontoAmbient RqJA
357 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
4. Heat Spreader or equivalent = 450 mm2, 2 oz.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT23 (TO236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
2F M G
G
1
2F = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
MMBT2907ALT1G SOT23
SMMBT2907ALT1G (PbFree)
MMBT2907ALT3G SOT23
SMMBT2907ALT3G (PbFree)
Shipping
3000 / Tape &
Reel
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 13
1
Publication Order Number:
MMBT2907ALT1/D
Free Datasheet http://www.datasheet4u.com/




MMBT2907AL pdf, 반도체, 판매, 대치품
MMBT2907AL, SMMBT2907AL
TYPICAL SMALLSIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0
6.0 IC = -1.0 mA, Rs = 430 W
-500 mA, Rs = 560 W
-50 mA, Rs = 2.7 kW
4.0 -100 mA, Rs = 1.6 kW
6.0
4.0
2.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
IC = -50 mA
-100 mA
-500 mA
-1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
50 k
30
20 Ceb
400
300
200
10
7.0
5.0 Ccb
3.0
2.0
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
100
80 VCE = -20 V
60 TJ = 25°C
40
30
20
-1.0 -2.0
-5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
-500 -1000
Figure 10. CurrentGain Bandwidth Product
1
IC/IB = 10
0.1
25°C
150°C
55°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.0 IC/IB = 10
0.9 55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
http://onsemi.com
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