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PDF NVMFS5826NL Data sheet ( Hoja de datos )

Número de pieza NVMFS5826NL
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
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No Preview Available ! NVMFS5826NL Hoja de datos, Descripción, Manual

NVMFS5826NL
Power MOSFET
60 V, 24 mW, 26 A, Single NChannel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5826NLWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
These are PbFree Devices and RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
26
19
39
19
8.0
6.0
3.6
1.8
130
55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 32 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 20 A, L = 0.1 mH, RG = 25 W)
EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Notes 2, 3)
RYJmb
3.9 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
42
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
24 mW @ 10 V
32 mW @ 4.5 V
ID MAX
26 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 3
1
Publication Order Number:
NVMFS5826NL/D
Free Datasheet http://www.datasheet4u.com/

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NVMFS5826NL pdf
NVMFS5826NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping
NVMFS5826NLT1G
V5826L
DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5826NLWFT1G
5826LW
DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5826NLT3G
V5826L
DFN5
(PbFree)
5000 / Tape & Reel
NVMFS5826NLWFT3G
5826LW
DFN5
(PbFree)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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