NVMFS5830NL Datasheet PDF - ON Semiconductor
| Part Number | NVMFS5830NL | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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NVMFS5830NL
Power MOSFET
40 V, 2.3 mW, 185 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
± 20
185
131
158
79
29
20
3.8
1.9
1012
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 185 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 85 A, L
= 0.1 mH, RG = 25 W)
EAS
361 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb
1.0 °C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
2.3 mW @ 10 V
3.6 mW @ 4.5 V
ID MAX
185 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S V5830L
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NVMFS5830NLT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NVMFS5830NLT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 1
1
Publication Order Number:
NVMFS5830NL/D
Free Datasheet http://www.datasheet4u.com/
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NVMFS5830NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
1
10 100 1000
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
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| Information | Total 6 Pages | |
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