|
|
|
부품번호 | NCV8452 기능 |
|
|
기능 | Self Protected High Side Driver | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 13 페이지수
NCV8452
Self Protected High Side
Driver with Temperature
Shutdown and Current Limit
The NCV8452 is a fully protected High−Side driver that can be used
to switch a wide variety of loads, such as bulbs, solenoids and other
activators. The device is internally protected from an overload
condition by an active current limit and thermal shutdown.
Features
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• CMOS (3 V/5 V) Compatible Control Input
• Overvoltage Protection and Shutdown
• Output Voltage Clamp for Inductive Switching
• Under Voltage Shutdown
• Loss of Ground Protection
• ESD Protection
• Reverse Battery Protection (with external resistor)
• Very Low Standby Current
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
PRODUCT SUMMARY
Symbol
Characteristics
VOV
VD
RON
IILIM
Overvoltage Protection
Operation Voltage
On−State Resistance
Output Current Limit
Value
41
5 − 34
200
1.0
Unit
V
V
mW
A
http://onsemi.com
MARKING
DIAGRAM
SOT−223
(TO−261)
CASE 318E
AYW
V8452G
G
1
V8452
A
Y
W
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 2
1
Publication Order Number:
NCV8452/D
Free Datasheet http://www.datasheet4u.com/
NCV8452
ELECTRICAL CHARACTERISTICS (VD = 13.5 V; −40°C < TJ < 150°C unless otherwise specified)
Value
Rating
Symbol
Conditions
Min Typ Max Unit
Operating Supply Voltage
Undervoltage Shutdown
Undervoltage Restart
Undervoltage Hysteresis
Overvoltage Shutdown
Overvoltage Restart
On−state Resistance
Standby Current
Active Ground Current
Output Leakage Current
INPUT CHARACTERISTICS
VD 5 − 34 V
VUV 2.5 5.5 V
VUV(res)
6.0 V
VUV(hyst)
0.3
VOV 34 42 V
VOV(res)
33
RON
IOUT = 0.5 A, VIN = 5 V, TJ = 25°C
IOUT = 0.5 A, VIN = 5 V, TJ = 150°C
160 200 mW
− 400
ID(off)
VIN = VOUT = 0 V
12 25 mA
IGND(on)
VIN = 5 V
1 1.8 mA
IOUT(off)
VIN = 0 V
2 mA
Input Voltage − Low
Input Voltage − High
Off State Input Current
On State Input Current
Input Threshold Hysteresis
Input Resistance
SWITCHING CHARACTERISTICS
VIN(low)
VIN(high)
IIN(off)
IIN(on)
VIN(hyst)
RI
VIN = 0.7 V
VIN = 5.0 V
0.8 V
2.2 V
10 mA
10 mA
0.3 V
1.5 2.8 3.5 kW
Turn−On Time
Turn−Off Time
Slew Rate On
Slew Rate Off
REVERSE BATTERY (Note 8)
ton
toff
dVOUT/dton
dVOUT/dtoff
to 90% VOUT, RL = 24 W
to 10% VOUT, RL = 24 W
10% to 30% VOUT, RL = 24 W
70% to 40% VOUT, RL = 24 W
60 120 ms
60 120 ms
1 4 V / ms
1 4 V / ms
Reverse Battery
−VD Requires a 150 W
Resistor in GND Connection
32 V
Forward Voltage
PROTECTION FUNCTIONS (Note 9)
VF
TJ = 150°C
0.6 V
Temperature Shutdown (Note 8)
TSD
150 175 200
°C
Temperature Shutdown Hysteresis
(Note 8)
TSD(hyst)
10 °C
Overvoltage Protection
Switch Off Output Clamp Voltage
VOV
VCLAMP
ID = 4 mA
ID = 4 mA, VIN = 0 V
41
VD −
41
VD −
47
V
V
Output Current Limit Initial Peak
ILIM
VD = 20 V, TJ = 25°C
TJ = −40°C to150°C
1.8
1.0 −
3
A
8. Not subjected to production testing
9. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions must
limit the duration and number of activation cycles.
http://onsemi.com
4
Free Datasheet http://www.datasheet4u.com/
4페이지 NCV8452
TYPICAL CHARACTERISTIC CURVES
2.0
1.8 VIN = 5 V
−40°C
1.6
1.4 25°C
1.2
1.0 100°C
0.8
0.6 150°C
0.4
0.2
0
0 5 10 15 20 25 30 35 40
VD (V)
Figure 11. Active Ground Current vs. Supply
Voltage
2.5
2
Turn On
1.5
Turn Off
1
0.5
0−50VD−=2513.5
V
0
25 50 75 100 125 150 175
TJ (°C)
Figure 13. Input Threshold Voltage vs.
Junction Temperature
2.0
1.8 VIN = 5 V
1.6 VD = 35 V
1.4
1.2
1.0
VD = 13.5 V
0.8
0.6
0.4 VD = 5 V
0.2
0
−50 −25 0
25 50 75 100 125 150 175
TJ (°C)
Figure 12. Active Ground Current vs. Junction
Temperature
0.3
0.25
0.2
0.15
0.1
0.05
0
−50 −25 0
25 50 75 100 125 150 175
TJ (°C)
Figure 14. Input Threshold Hysteresis vs.
Junction Temperature
2
1.75 Turn ON
1.5 Turn OFF
1.25
1
0.75
0.5
0.25
0
0 5 10 15 20 25 30 35 40
VD (V)
Figure 15. Input Threshold Voltage vs. Supply
Voltage
http://onsemi.com
7
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ NCV8452.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NCV8450 | Self-Protected High Side Driver | ON Semiconductor |
NCV8450A | Self-Protected High Side Driver | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |