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NCV8452 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NCV8452은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NCV8452 기능
기능 Self Protected High Side Driver
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NCV8452 데이터시트, 핀배열, 회로
NCV8452
Self Protected High Side
Driver with Temperature
Shutdown and Current Limit
The NCV8452 is a fully protected HighSide driver that can be used
to switch a wide variety of loads, such as bulbs, solenoids and other
activators. The device is internally protected from an overload
condition by an active current limit and thermal shutdown.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
CMOS (3 V/5 V) Compatible Control Input
Overvoltage Protection and Shutdown
Output Voltage Clamp for Inductive Switching
Under Voltage Shutdown
Loss of Ground Protection
ESD Protection
Reverse Battery Protection (with external resistor)
Very Low Standby Current
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
These are PbFree Devices
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
PRODUCT SUMMARY
Symbol
Characteristics
VOV
VD
RON
IILIM
Overvoltage Protection
Operation Voltage
OnState Resistance
Output Current Limit
Value
41
5 34
200
1.0
Unit
V
V
mW
A
http://onsemi.com
MARKING
DIAGRAM
SOT223
(TO261)
CASE 318E
AYW
V8452G
G
1
V8452
A
Y
W
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 2
1
Publication Order Number:
NCV8452/D
Free Datasheet http://www.datasheet4u.com/




NCV8452 pdf, 반도체, 판매, 대치품
NCV8452
ELECTRICAL CHARACTERISTICS (VD = 13.5 V; 40°C < TJ < 150°C unless otherwise specified)
Value
Rating
Symbol
Conditions
Min Typ Max Unit
Operating Supply Voltage
Undervoltage Shutdown
Undervoltage Restart
Undervoltage Hysteresis
Overvoltage Shutdown
Overvoltage Restart
Onstate Resistance
Standby Current
Active Ground Current
Output Leakage Current
INPUT CHARACTERISTICS
VD 5 34 V
VUV 2.5 5.5 V
VUV(res)
6.0 V
VUV(hyst)
0.3
VOV 34 42 V
VOV(res)
33
RON
IOUT = 0.5 A, VIN = 5 V, TJ = 25°C
IOUT = 0.5 A, VIN = 5 V, TJ = 150°C
160 200 mW
400
ID(off)
VIN = VOUT = 0 V
12 25 mA
IGND(on)
VIN = 5 V
1 1.8 mA
IOUT(off)
VIN = 0 V
2 mA
Input Voltage Low
Input Voltage High
Off State Input Current
On State Input Current
Input Threshold Hysteresis
Input Resistance
SWITCHING CHARACTERISTICS
VIN(low)
VIN(high)
IIN(off)
IIN(on)
VIN(hyst)
RI
VIN = 0.7 V
VIN = 5.0 V
0.8 V
2.2 V
10 mA
10 mA
0.3 V
1.5 2.8 3.5 kW
TurnOn Time
TurnOff Time
Slew Rate On
Slew Rate Off
REVERSE BATTERY (Note 8)
ton
toff
dVOUT/dton
dVOUT/dtoff
to 90% VOUT, RL = 24 W
to 10% VOUT, RL = 24 W
10% to 30% VOUT, RL = 24 W
70% to 40% VOUT, RL = 24 W
60 120 ms
60 120 ms
1 4 V / ms
1 4 V / ms
Reverse Battery
VD Requires a 150 W
Resistor in GND Connection
32 V
Forward Voltage
PROTECTION FUNCTIONS (Note 9)
VF
TJ = 150°C
0.6 V
Temperature Shutdown (Note 8)
TSD
150 175 200
°C
Temperature Shutdown Hysteresis
(Note 8)
TSD(hyst)
10 °C
Overvoltage Protection
Switch Off Output Clamp Voltage
VOV
VCLAMP
ID = 4 mA
ID = 4 mA, VIN = 0 V
41
VD
41
VD
47
V
V
Output Current Limit Initial Peak
ILIM
VD = 20 V, TJ = 25°C
TJ = 40°C to150°C
1.8
1.0
3
A
8. Not subjected to production testing
9. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions must
limit the duration and number of activation cycles.
http://onsemi.com
4
Free Datasheet http://www.datasheet4u.com/

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NCV8452 전자부품, 판매, 대치품
NCV8452
TYPICAL CHARACTERISTIC CURVES
2.0
1.8 VIN = 5 V
40°C
1.6
1.4 25°C
1.2
1.0 100°C
0.8
0.6 150°C
0.4
0.2
0
0 5 10 15 20 25 30 35 40
VD (V)
Figure 11. Active Ground Current vs. Supply
Voltage
2.5
2
Turn On
1.5
Turn Off
1
0.5
050VD=2513.5
V
0
25 50 75 100 125 150 175
TJ (°C)
Figure 13. Input Threshold Voltage vs.
Junction Temperature
2.0
1.8 VIN = 5 V
1.6 VD = 35 V
1.4
1.2
1.0
VD = 13.5 V
0.8
0.6
0.4 VD = 5 V
0.2
0
50 25 0
25 50 75 100 125 150 175
TJ (°C)
Figure 12. Active Ground Current vs. Junction
Temperature
0.3
0.25
0.2
0.15
0.1
0.05
0
50 25 0
25 50 75 100 125 150 175
TJ (°C)
Figure 14. Input Threshold Hysteresis vs.
Junction Temperature
2
1.75 Turn ON
1.5 Turn OFF
1.25
1
0.75
0.5
0.25
0
0 5 10 15 20 25 30 35 40
VD (V)
Figure 15. Input Threshold Voltage vs. Supply
Voltage
http://onsemi.com
7
Free Datasheet http://www.datasheet4u.com/

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