2V7002K PDF 데이터시트 ( Data )

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2V7002K 기능

기능

Small Signal MOSFET

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2N7002K, 2V7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

• ESD Protected

• Low RDS(on)

• Surface Mount Package

• 2V Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Rating

Symbol Value

Unit

Drain−to−Source Voltage

VDSS

Gate−to−Source Voltage

VGS ±20

Drain Current (Note 1)

Steady State 1 sq in Pad

TA = 25°C

TA = 85°C

380

270

Drain Current (Note 2)

Steady State Minimum Pad

TA = 25°C

TA = 85°C

320

230

Power Dissipation

Steady State 1 sq in Pad

Steady State Minimum Pad

PD mW

420

300

Pulsed Drain Current (tp = 10 ms)

Operating Junction and Storage

Temperature Range

IDM

TJ, TSTG

1.5

−55 to

+150

°C

Source Current (Body Diode)

IS 300 mA

Lead Temperature for Soldering Purposes TL 260 °C

(1/8″ from case for 10 s)

Gate−Source ESD Rating

(HBM, Method 3015)

ESD

2000

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

www.onsemi.com

V(BR)DSS

60 V

RDS(on) MAX

1.6 W @ 10 V

2.5 W @ 4.5 V

ID MAX

380 mA

SIMPLIFIED SCHEMATIC

Gate 1

3 Drain

Source 2

(Top View)

MARKING DIAGRAM

3 & PIN ASSIGNMENT

Drain

SOT−23

CASE 318

STYLE 21

704 MG

Gate

Source

704 = Specific Device Code*

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend-

ing upon manufacturing location. This is a

representation only and actual devices may

not match this drawing exactly.

ORDERING INFORMATION

Device

2N7002KT1G

Package

Shipping†

SOT−23 3000 / Tape & Reel

(Pb−Free)

2V7002KT1G

SOT−23 3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

April, 2015 − Rev. 13

Publication Order Number:

2N7002K/D

2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

Ciss

Coss

TJ = 25°C

VGS = 0 V

Crss

0 4 8 12 16 20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

VGS = 0 V

TJ = 85°C

TJ = 25°C

0.1

0.01

0.4 0.6

0.8

1.0

1.2

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

TJ = 25°C

4 ID = 0.2 A

0 0.2 0.4 0.6 0.8

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

2.5

2.4 ID = 250 mA

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

−50 −25

25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 10. Threshold Voltage with

Temperature

www.onsemi.com

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[ 2V7002K.PDF 데이터시트 ]

ON Semiconductor에서 제조한 전자 부품 2V7002K은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.

2V7002K의 기능 및 특징 중 하나는 "Small Signal MOSFET" 입니다.

일반적으로, ON Semiconductor에서 제조되는 전자부품들은 우수한 성능과
품질에 대한 신뢰성을 갖추고 있습니다.

구매 문의

일반 IC 문의 : 샘플 및 소량 구매
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