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PDF TK22E10N1 Data sheet ( Hoja de datos )
| Número de pieza | TK22E10N1 | |
| Descripción | Switching Voltage Regulators | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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MOSFETs Silicon N-channel MOS (U-MOS-H)
TK22E10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TK22E10N1
1: Gate
2: Drain (heatsink)
3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 100 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25)
(Note 1)
ID
52 A
Drain current (DC)
(Note 1,2)
ID
22
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
102
Power dissipation
(Tc = 25)
PD 72 W
Single-pulse avalanche energy
(Note 3)
EAS
48 mJ
Avalanche current
IAR 22 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-01-20
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
1 page  
8. Characteristics Curves (Note)
TK22E10N1
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5 2012-01-20
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TK22E10N1.PDF ] | |
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