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PDF SW10N65 Data sheet ( Hoja de datos )
| Número de pieza | SW10N65 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | SAMWIN | |
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SW10N65
N-channel Enhanced mode TO-220F/TO-220 MOSFET
Features
TO- 220F
TO-220
High ruggedness
Low RDS(ON) (Typ 1Ω)@VGS=10V
Low Gate Charge (Typ 40nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charge,LED,PC Power
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BVDSS : 650V
ID : 10A
RDS(ON) : 1Ω
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 10N65
SW F 10N65
Marking
SW10N65
SW10N65
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220
TO-220F
650
10.0*
5.7*
36
±30
212
15
5
156 38
1.25 0.3
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case
Rthja Thermal resistance, Junction to ambient
Value
TO-220
0.8
TO-220F
3.3
55
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
1/6
1 page  
SW10N65
Fig. 10. Switching time test circuit & waveform
10VIN
RL
VDS
VDD
RGS DUT
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW10N65.PDF ] | |
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