Datasheet.kr   

IGP30N60T 데이터시트 PDF




Infineon에서 제조한 전자 부품 IGP30N60T은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IGP30N60T 자료 제공

부품번호 IGP30N60T 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
제조업체 Infineon
로고 Infineon 로고


IGP30N60T 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

IGP30N60T 데이터시트, 핀배열, 회로
TrenchStop®Series
IGP30N60T
IGW30N60T
Low Loss IGBT in TrenchStop® and Fieldstop technology
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterruptible Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
PG-TO-220-3-1
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
Package
IGP30N60T 600V 30A
1.5V
175°C
G30T60 PG-TO-220-3-1
IGW30N60T 600V 30A
1.5V
175°C
G30T60 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
600
60
30
90
90
±20
5
187
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.6 Nov. 09
Free Datasheet http://www.datasheet4u.com/




IGP30N60T pdf, 반도체, 판매, 대치품
TrenchStop®Series
IGP30N60T
IGW30N60T
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
100Hz
TC=80°C
TC=110°C
Ic
Ic
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 10)
100A
10A
tp=2µs
10µs
50µs
1A 1ms
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 175°C;
VGE=15V)
160W
120W
80W
40W
0W25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj 175°C)
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 2.6 Nov. 09
Free Datasheet http://www.datasheet4u.com/

4페이지










IGP30N60T 전자부품, 판매, 대치품
TrenchStop®Series
IGP30N60T
IGW30N60T
5.0mJ
*) Eon and Ets include losses
due to diode recovery
4.0mJ
Ets* *) Eon an d E ts in c lud e lo s se s
due to diode recovery
E ts*
3 .0 m J
3.0mJ
2.0mJ
Eoff
1.0mJ
0.0mJ
0A
Eon*
10A 20A 30A 40A 50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 10,
Dynamic test circuit in Figure E)
2 .0 m J
E off
1 .0 m J
Eon*
0 .0 m J
0Ω
10Ω 20Ω 30Ω 40Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
2.0mJ
*) Eon and Ets include losses
due to diode recovery
1.5mJ
Ets*
1.0mJ Eoff
0.5mJ Eon*
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, RG = 10,
Dynamic test circuit in Figure E)
3 .0 m J
*) Eon and Ets include losses
due to diode recovery
2 .5 m J
2 .0 m J
E ts*
1 .5 m J
1 .0 m J
0 .5 m J
E off
E on*
0 .0 m J
300V 350V 400V 450V 500V 550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, RG = 10,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.6 Nov. 09
Free Datasheet http://www.datasheet4u.com/

7페이지


구       성 총 13 페이지수
다운로드[ IGP30N60T.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IGP30N60H3

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon
IGP30N60T

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵