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IRFZ48VSPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRFZ48VSPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRFZ48VSPBF 자료 제공

부품번호 IRFZ48VSPBF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


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IRFZ48VSPBF 데이터시트, 핀배열, 회로
PD - 95573
IRFZ48VSPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 12m
ID = 72A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
D2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
72
51
290
150
1.0
± 20
166
72
15
5.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/19/04
Free Datasheet http://www.datasheet4u.com/




IRFZ48VSPBF pdf, 반도체, 판매, 대치품
IRFZ48VSPbF
4000
3000
2000
VGS = 0V, f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20 ID = 72A
15
10
VDS= 48V
VDS= 30V
VDS= 12V
1000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
5
0
0 20 40 60 80 100 120
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
TJ = 175°C
100
10 TJ = 25°C
1
0.1
0.2
V GS= 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100us
10 1ms
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
Free Datasheet http://www.datasheet4u.com/

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IRFZ48VSPBF 전자부품, 판매, 대치품
D.U.T
+
‚
-

RG
IRFZ48VSPbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
www.irf.com
Fig 14. For N-Channel HEXFETS
VDD
ISD
7
Free Datasheet http://www.datasheet4u.com/

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IRFZ48VSPBF

Power MOSFET ( Transistor )

International Rectifier
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