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BZB84 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BZB84
기능 Dual Zener diodes
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BZB84 데이터시트, 핀배열, 회로
BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Non-repetitive peak reverse power
dissipation: 40 W
I Total power dissipation: 300 mW
I Two tolerance series:
B = ±2 % and C = ±5 %
I Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
I Small plastic package suitable for
surface-mounted design
I Dual common anode configuration
I AEC-Q101 qualified
1.3 Applications
I General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
VF
PZSM
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
IF = 10 mA
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
Min Typ Max Unit
[1] - - 0.9 V
[2] - - 40 W
Free
Datash




BZB84 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 °C
[2] -
-
55
65
Max
300
150
+150
+150
Unit
mW
°C
°C
°C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per device; single diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 417 K/W
[2] - - 100 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering points at pins 1 and 2.
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VF forward voltage
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
IF = 10 mA
Min Typ Max Unit
[1] - - 0.9 V
BZB84_SER_3
Product data sheet
Rev. 03 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
4 of 14
Free Datasheet http://www.datasheet4u.com/

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BZB84 전자부품, 판매, 대치품
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 10. Characteristics per type; BZB84-C2V4 to BZB84-C24
Tj = 25 °C unless otherwise specified.
BZB84- Working voltage
Cxxx VZ (V)
Differential
resistance
rdif ()
Reverse current Temperature
IR (µA)
coefficient
SZ (mV/K)
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Min
Max
Max
Max
Max VR (V) Min Max
2V4 2.2 2.6 600 100 50 1 3.5 0
2V7 2.5 2.9 600 100 20 1 3.5 0
3V0 2.8 3.2 600 95
10 1
3.5 0
3V3 3.1 3.5 600 95
5 1 3.5 0
3V6 3.4 3.8 600 90
5 1 3.5 0
3V9 3.7 4.1 600 90
3 1 3.5 0
4V3 4.0 4.6 600 90
3 1 3.5 0
4V7 4.4 5.0 500 80
3 2 3.5 0.2
5V1 4.8 5.4 480 60
2 2 2.7 1.2
5V6 5.2 6.0 400 40
1 2 2.0 2.5
6V2 5.8 6.6 150 10
3 4 0.4 3.7
6V8 6.4 7.2 80 15 2 4 1.2 4.5
7V5 7.0 7.9 80 15 1 5 2.5 5.3
8V2 7.7 8.7 80
15
0.70 5
3.2 6.2
9V1 8.5 9.6 100 15
0.50 6
3.8 7.0
10
9.4
10.6 150
20
0.20 7
4.5 8.0
11
10.4 11.6 150
20
0.10 8
5.4 9.0
12
11.4 12.7 150
25
0.10 8
6.0 10.0
13
12.4 14.1 170
30
0.10 8
7.0 11.0
15
13.8 15.6 200
30
0.05 10.5 9.2 13.0
16
15.3 17.1 200
40
0.05 11.2 10.4 14.0
18
16.8 19.1 225
45
0.05 12.6 12.4 16.0
20
18.8 21.2 225
55
0.05 14.0 14.4 18.0
22
20.8 23.3 250
55
0.05 15.4 16.4 20.0
24
22.8 25.6 250
70
0.05 16.8 18.4 22.0
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max Max
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
300 6.0
300 6.0
300 6.0
200 6.0
200 6.0
150 4.0
150 4.0
150 3.0
90 3.0
85 2.5
85 2.5
80 2.5
75 2.0
75 1.5
70 1.5
60 1.5
60 1.25
55 1.25
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
Product data sheet
Rev. 03 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
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Free Datasheet http://www.datasheet4u.com/

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BZB84

Dual Zener diodes

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