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What is BSB017N03LX3G?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Power MOSFET ( Transistor )".


BSB017N03LX3G Datasheet PDF - Infineon

Part Number BSB017N03LX3G
Description Power MOSFET ( Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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BSB017N03LX3 G
OptiMOSTM3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
30 V
1.7 m
147 A
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
CanPAKTM M
MG-WDSON-2
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package MX footprint and outline 1)
• Qualified according to JEDEC2) for target applications
Type
BSB017N03LX3 G
Package
MG-WDSON-2
Outline
MX
Marking
1103
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=45 K/W2)
T C=25 °C
T C=25 °C
I D=40 A, R GS=25
147 A
93
32
400
40
225 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 1
2009-05-11
Free Datasheet http://www.datasheet4u.com/

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BSB017N03LX3G equivalent
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
800
BSB017N03LX3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
720
640
560
480
10 V
400
5V
4.5 V
4V
5
4
3.2 V
3
3.5 V
320
240
160
80
0
0
12
V DS [V]
3.5 V
3.2 V
3V
2.8 V
3
4V
2
4.5 V
5V
10 V
7V
1
0
0 10 20 30 40 50
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
400
360
320 320
280
240 240
200
160 160
120
80
0
0
150 °C
25 °C
1234
V GS [V]
5
80
40
0
0
40 80 120
I D [A]
160
Rev. 2.0
page 5
2009-05-11
Free Datasheet http://www.datasheet4u.com/


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
BSB017N03LX3GThe function is Power MOSFET ( Transistor ). InfineonInfineon

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