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PDF BSB019N03LXG Data sheet ( Hoja de datos )
| Número de pieza | BSB019N03LXG | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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BSB019N03LX G
OptiMOSTM2 Power-MOSFET
Features
• Pb-free plating; RoHS compliant
• Dual sided cooling
• Low profile (<0.7 mm)
Product Summary
V DS
R DS(on),max
ID
30 V
1.9 mΩ
174 A
• Avalanche rated
• Qualified for consumer level application
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
MG-WDSON-2
• Optimized for high switching frequency DC/DC converter
• Low parasitic inductance
• Compatible with DirectFET® package MX footprint and outline 1)
Type
BSB019N03LX G 2)
Package
MG-WDSON-2
Outline
MX
Marking
1003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
174 A
V GS=10 V, T C=100 °C
110
V GS=10 V, T A=25 °C,
R thJA=45 K/W2)
31
Pulsed drain current3)
Avalanche current, single pulse4)
I D,pulse
I AS
T C=25 °C
T C=25 °C
400
50
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 Ω
290 mJ
Gate source voltage
V GS
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
4.5 V
5V
250
10 V
200
150
100
4V
3.5 V
3.2 V
BSB019N03LX G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
3V
5
4
3
2
3.2 V
3.5 V
4V
4.5 V
5V
10 V
50
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
3V
2.8 V
3
1
0
0 10 20 30 40 50
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
320
240
160
80
0
0
Rev. 2.0
150 °C
25 °C
1234
V GS [V]
250
200
150
100
50
0
50
page 5
40 80 120
I D [A]
160
2009-05-11
Free Datasheet http://www.datasheet4u.com/
5 Page 
BSB019N03LX G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2009-05-11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSB019N03LXG.PDF ] | |
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