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PDF FGH15T120SMD Data sheet ( Hoja de datos )
| Número de pieza | FGH15T120SMD | |
| Descripción | 15 A Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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September 2013
FGH15T120SMD
1200 V, 15 A Field Stop Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 15 A
• 100% of The Parts Tested for ILM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC Applications.
General Description
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Clamped Inductive Load Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Diode Continuous Forward Current
Diode Continuous Forward Current
@ TC = 25oC
@ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1. Vcc = 600 V,VGE = 15 V, IC = 60 A, RG =34 Ω , Inductive Load
2. Limited by Tjmax
©2013 Fairchild Semiconductor Corporation
FGH15T120SMD Rev. C1
1
C
G
E
Ratings
1200
±25
±30
30
15
60
60
30
15
100
333
167
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.45
2.0
40
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
1000
Cies
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
20
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Common Emitter
VCC = 600V, VGE = 15V
100 IC = 15A
TC = 25oC
TC = 175oC
tr
30
td(on)
10
0 14 28 42 56
Gate Resistance, RG [Ω]
Figure 11. Swithcing Loss vs.
Gate Resistance
20
Common Emitter
10 VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 175oC
Eon
1
Eoff
70
0.1
0
14 28 42 56
Gate Resistance, RG [Ω]
70
Figure 8. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
400V
9
VCC = 200V
600V
6
3
0
0 26 52 78 104 130
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
10000
1000
100
td(off)
10
1
0.1
0
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 175oC
14 28 42 56
Gate Resistance, RG [Ω]
70
Figure 12. Turn-on Characteristics vs.
Collector Current
300
Common Emitter
VGE = 15V, RG = 34Ω
TC = 25oC
100 TC = 175oC
tr
td(on)
10
0 6 12 18 24 30
Collector Current, IC [A]
©2013 Fairchild Semiconductor Corporation
FGH15T120SMD Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH15T120SMD.PDF ] | |
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