Datasheet.kr   

HIP6603 데이터시트 PDF




Intersil Corporation에서 제조한 전자 부품 HIP6603은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 HIP6603 자료 제공

부품번호 HIP6603 기능
기능 Synchronous-Rectified Buck MOSFET Drivers
제조업체 Intersil Corporation
로고 Intersil Corporation 로고


HIP6603 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

HIP6603 데이터시트, 핀배열, 회로
Data Sheet
HIP6601, HIP6603
January 2000
File Number 4819
Synchronous-Rectified Buck MOSFET
Drivers
The HIP6601 and HIP6603 are high frequency, dual
MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous-rectified buck
converter topology. These drivers combined with a HIP630x
Multi-Phase Buck PWM controller and Intersil UltraFETs™
form a complete core-voltage regulator solution for
advanced microprocessors.
The HIP6601 drives the lower gate in a synchronous-rectifier
bridge to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603 drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses.
The output drivers in the HIP6601 and HIP6603 have the
capacity to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a 3000pF load
with a 30ns propagation delay and 50ns transition time. Both
products implement bootstrapping on the upper gate with
only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
Ordering Information
TEMP. RANGE
PART NUMBER (oC) PACKAGE PKG. NO.
HIP6601CB
0 to 85
8 Ld SOIC M8.15
HIP6603CB
0 to 85
8 Ld SOIC M8.15
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC Package
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Pinout
HIP6601CB/HIP6603CB
(SOIC)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 PVCC
6 VCC
5 LGATE
Block Diagram
PVCC
BOOT
VCC
+5V
PWM
10K
CONTROL
LOGIC
10K
SHOOT-
THROUGH
PROTECTION
UGATE
PHASE
VCC FOR HIP6601
PVCC FOR HIP6603
LGATE
GND
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
Pentium® is a registered trademark of Intel Corporation. AMD® is a registered trademark of Advanced Micro Devices, Inc.




HIP6603 pdf, 반도체, 판매, 대치품
HIP6601, HIP6603
Functional Pin Description
UGATE (Pin 1)
Upper gate drive output. Connect to gate of high-side power
N-Channel MOSFET.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. See the Internal Bootstrap
Device section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
GND (Pin 4)
Bias and reference ground. All signals are referenced to this
node.
LGATE (Pin 5)
Lower gate drive output. Connect to gate of the low-side
power N-Channel MOSFET.
VCC (Pin 6)
Connect this pin to a +12V bias supply. Place a high quality
bypass capacitor from this pin to GND.
Timing Diagram
PVCC (Pin 7)
For the HIP6601, this pin supplies the upper gate drive bias.
Connect this pin from +12V down to +5V.
For the HIP6603, this pin supplies both the upper and lower
gate drive bias. Connect this pin to either +12V or +5V.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. The PHASE voltage is
monitored for adaptive shoot-through protection. This pin
also provides a return path for the upper gate drive.
Description
Operation
Designed for versatility and speed, the HIP6601 and HIP6603
dual MOSFET drivers control both high-side and low-side N-
Channel FETs from one externally provided PWM signal.
The upper and lower gates are held low until the driver is
initialized. Once the VCC voltage surpasses the VCC Rising
Threshold (See Electrical Specifications), the PWM signal
takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see Timing
Diagram). After a short propagation delay [TPDLLGATE], the
lower gate begins to fall. Typical fall times [TFLGATE] are
provided in the Electrical Specifications section. Adaptive
shoot-through circuitry monitors the LGATE voltage and
determines the upper gate delay time [TPDHUGATE] based
on how quickly the LGATE voltage drops below 1.0V. This
prevents both the lower and upper MOSFETs from
conducting simultaneously or shoot-through. Once this delay
period is complete the upper gate drive begins to rise
[TRUGATE] and the upper MOSFET turns on.
PWM
TPDHUGATE
UGATE
LGATE
TPDLLGATE
TFLGATE
TRUGATE
TPDLUGATE
TFUGATE
TPDHLGATE
TRLGATE
4

4페이지










HIP6603 전자부품, 판매, 대치품
HIP6601, HIP6603
600
FREQUENCY = 800kHz
500
PVCC = VCC = 12V
400
FREQUENCY = 500kHz
300
200
100
1.0
FREQUENCY = 200kHz
2.0 3.0 4.0
GATE CAPACITANCE (CU = CL), (nF)
5.0
FIGURE 3. POWER DISSIPATION vs LOADING
300
PVCC = 5V VCC = 12V
240 CU = CL = 3nF
180 CU = 3nF
120
60 CL = 1nF
0
500
1000
1500
FREQUENCY (kHz)
FIGURE 5. 3nF LOADING PROFILE (HIP6603)
2000
400
CU = 5nF
350
CU = 3nF
300
400
PVCC = 5V VCC = 12V
320
CU = CL = 5nF
CU = CL = 4nF
240
CU = CL = 3nF
160
80
CU = CL = 2nF
CU = CL = 1nF
0
500
1000
1500
2000
FREQUENCY (kHz)
FIGURE 4. POWER DISSIPATION vs FREQUENCY (HIP6603)
250
PVCC = 5V VCC = 12V
200
FREQUENCY = 800kHz
150
100
FREQUENCY = 500kHz
50
FREQUENCY = 200kHz
0
1.0 2.0 3.0 4.0 5.0
GATE CAPACITANCE (CU = CL), (nF)
FIGURE 6. VARIABLE LOADING PROFILE (HIP6603)
PVCC = 5V VCC = 12V
200
CU = 1nF
150
100
1.0 2.0 3.0 4.0 5.0
FREQUENCY (kHz)
FIGURE 7. POWER DISSIPATION vs LOADING (HIP6601)
7

7페이지


구       성 총 8 페이지수
다운로드[ HIP6603.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
HIP6601

Synchronous-Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
HIP6601A

Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵