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PDF 33663 Data sheet ( Hoja de datos )
| Número de pieza | 33663 | |
| Descripción | LIN 2.1 / SAEJ2602-2 Dual LIN Physical Layer | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Advance Information
Document Number: MC33663
Rev. 1.0, 7/2012
LIN 2.1 / SAEJ2602-2 Dual LIN
Physical Layer
33663
The local interconnect network (LIN) is a serial communication
protocol designed to support automotive networks in conjunction with
controller area network (CAN). As the lowest level of a hierarchical
network, LIN enables cost-effective communication with sensors and
actuators when all the features of CAN are not required.
The 33663 product line integrates two physical layer LIN bus
dedicated to automotive LIN sub-bus applications. The MC33663LEF
and MC33663SEF devices offer normal baud rate (20 kbps) and the
MC33663JEF slow baud rate (10 kbps). Both devices integrate fast
baud rate (above 100 kbps) for test and programming modes. They
present excellent electromagnetic compatibility (EMC) and radiated
emission performance, electrostatic discharge (ESD) robustness and
safe behavior, in the event of LIN bus short-to-ground or LIN bus
leakage during low-power mode.
DUAL LIN TRANSCEIVER
EF SUFFIX (PB-FREE)
98ASB42565B
14-PIN SOICN
Features
ORDERING INFORMATION
• Operational from VSUP 7.0 to 18 V DC, functional up to 27 V DC,
and handles 40 V during load dump
• Compatible with LIN protocol specification 2.1, and SAEJ2602-2
Device
(add an R2 suffix for
Tape and reel orders)
Temperature
Range (TA)
Package
• Very high immunity against electromagnetic interference
• Low standby current in Sleep mode
MC33663ALEF
• Over-temperature protection
MC33663AJEF
-40 to 125°C
14 SOICN
• Permanent dominant state detection
• Fast baud rate mode selection reported by RXD
MC33663ASEF
• Active bus waveshaping offering excellent radiated emission
performance
• Sustains ±15.0 kV ESD IEC6100-4-2 on LIN BUS and VSUP pins
• 5.0 and 3.3 V compatible digital inputs without any external components required
VBAT
Regulator
12 V
5.0 or
3.3 V
MCU
VDD
33663
VSUP
WAKE1
EN1
RXD1
TXD1
WAKE2
INH1
INH2
EN2
RXD2
TXD2
LIN1
GND LIN2
1.0 k
1.0 k
LIN Interface 1
LIN Interface 2
Figure 1. 33663 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
Free Datasheet http://www.datasheet4u.com/
1 page  
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Power Supply Voltage (VSUP)
Normal Operation (DC)
Transient input voltage with external component (according to ISO7637-2 &
ISO7637-3 & “Hardware Requirements for LIN, CAN, and Flexray Interfaces
in Automotive Applications” specification Rev. 1.1/December 2nd, 2009) (See
Table 4 and Figure 4)
- Pulse 1 (test up to the limit for Damage - Class A(1))
- Pulse 2a (test up to the limit for Damage - Class A(1))
- Pulse 3a (test up to the limit for Damage - Class A(1))
- Pulse 3b (test up to the limit for Damage - Class A(1))
- Pulse 5b (Class A)(1)
Logic Voltage (RXD1,2, TXD1,2, EN1,2 Pins)
WAKE (VWAKE1,VWAKE2)
Normal Operation with in series 2*18 k resistor (DC)
Transient input voltage with external component (according to ISO7637-2 &
ISO7637-3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces
in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See
Table 4 and Figure 5)
- Pulse 1 (test up to the limit for Damage - Class D(2))
- Pulse 2a (test up to the limit for Damage - Class D(2))
- Pulse 3a (test up to the limit for Damage - Class D(2))
- Pulse 3b (test up to the limit for Damage - Class D(2))
VSUP(SS)
VSUP(S1)
VSUP(S2A)
VSUP(S3A)
VSUP(S3B)
VSUP(S5B)
VLOG
VWAKE(SS)
VWAKE(S1)
VWAKE(S2A)
VWAKE(S3A)
VWAKE(S3B)
-0.3 to 27
-100
+75
-150
+100
-0.3 to 40
-0.3 to 5.5
-27 to 40
-100
+75
-150
+100
V
V
V
LIN Bus Voltage (VLIN1, VLIN2)
Normal Operation (DC)
Transient (Coupled Through 1.0 nF Capacitor) (according to ISO7637-2 &
ISO7637-3) (See Table 4 and Figure 6)
- Pulse 1 (test up to the limit for Damage - Class D(2))
- Pulse 2a (test up to the limit for Damage - Class D(2))
- Pulse 3a (test up to the limit for Damage - Class D(2))
- Pulse 3b (test up to the limit for Damage - Class D(2))
VLIN(SS)
VLIN(S1)
VLIN(S2A)
VLIN(S3A)
VLIN(S3B)
-27 to 40
-100
+75
-150
+100
V
Notes
1. Class A: All functions of a device/system perform as designed during and after exposure to disturbance.
2. Class D: At least one function of the Transceiver stops working properly during the test and will return into proper operation automatically
when the exposure to the disturbance has ended. No physical damage of the IC occurs.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33663
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V VSUP 18 V, -40 C TA 125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min Typ Max Unit
TXD1, TXD2 INPUT PINS (LOGIC)
Low Level Input Voltage
High Level Input Voltage
Input Threshold Voltage Hysteresis
Pull-up Current Source
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
VIL – – 0.8 V
VIH 2.0 – – V
VINHYST 100 300 600 mV
IPU A
-60 -35
- 20
EN1, EN2 INPUT PINS (LOGIC)
Low Level Input Voltage
High Level Input Voltage
Input Voltage Threshold Hysteresis
Pull-down Resistor
LIN PHYSICAL LAYER - TRANSCEIVER LIN (LIN1, LIN2)(7)
Operating Voltage Range(8)
Supply Voltage Range
Voltage Range (within which the device is not destroyed)
Current Limitation for Driver Dominant State
Driver ON, VBUS = 18 V
VIL
VIH
VINHYST
RPD
––
2.0 –
100 400
100 230
VBAT
VSUP
VSUP_NON_OP
IBUS_LIM
8.0
7.0
-0.3
40
–
–
–
90
0.8 V
–V
600 mV
350 kohm
18 V
18 V
40 V
mA
200
Input Leakage Current at the Receiver
Driver off; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_DOM
-1.0
–
mA
–
Leakage Output Current to GND
IBUS_PAS_REC
Driver Off; 8.0 V VBAT 18 V; 8.0 V VBUS 18 V; VBUS VBAT;
– – 20
VBUS VSUP
Control Unit Disconnected from Ground(9)
GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V
IBUS_NO_GND
-1.0
–
1.0
VBAT Disconnected; VSUP_DEVICE = GND; 0 V < VBUS < 18 V(10)
Receiver Dominant State(11)
Receiver Recessive State(12)
IBUSNO_BAT
VBUSDOM
VBUSREC
–
–
0.6
–
–
–
10
0.4
–
Notes
7. Parameters guaranteed for 7.0 V VSUP 18 V.
8. Voltage range at the battery level, including the reverse battery diode.
9. Loss of local ground must not affect communication in the residual network.
10. Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
11. LIN threshold for a dominant state.
12. LIN threshold for a recessive state.
µA
mA
µA
VSUP
VSUP
Analog Integrated Circuit Device Data
Freescale Semiconductor
33663
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet 33663.PDF ] | |
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