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부품번호 | SQJ941EP 기능 |
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기능 | Automotive Dual P-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 9 페이지수
www.vishay.com
SQJ941EP
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A) per leg
Configuration
PowerPAK® SO-8L Dual
- 30
0.024
0.039
-8
Dual
6.15 mm
D
2
4
G2
3
S2
2
G1
1
S1
Bottom View
D
1
5.13 mm
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S1 S2
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ941EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
- 30
± 20
-8
-8
-8
- 32
- 24
28.8
55
18.5
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
85
°C/W
RthJC
2.7
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1848-Rev. C, 30-Jul-12
1
Document Number: 65546
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.6
ID = 9 A
1.4
1.2
VGS = 10 V
100
10
1
1.0 0.1
TJ = 150 °C
SQJ941EP
Vishay Siliconix
TJ = 25 °C
0.8 0.01
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.15 1.1
0.12
0.09
0.06
0.03
TJ = 150 °C
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
- 30
- 32
0.8
ID = 250 µA
0.5
ID = 5 mA
0.2
- 0.1
- 0.4
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
ID = 1 mA
- 34
- 36
- 38
- 40
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
BVDSS vs. Junction Temperature
S12-1848-Rev. C, 30-Jul-12
4
Document Number: 65546
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
4페이지 www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® SO-8L Case Outline
Revision: 27-Aug-12
1 Document Number: 69003
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
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부품번호 | 상세설명 및 기능 | 제조사 |
SQJ941EP | Automotive Dual P-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |