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Número de pieza | SQJ951EP | |
Descripción | Automotive Dual P-Channel MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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SQJ951EP
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = - 10 V
RDS(on) (Ω) at VGS = - 4.5 V
ID (A)
Configuration
PowerPAK® SO-8L Dual
- 30
0.017
0.036
- 30
Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1 S2
6.15 mm
D
2
4
G2
3
S2
2
G1 1
S1
Bottom View
D
1
5.13 mm
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ951EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °Ca
TC = 125 °C
VGS
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
- 30
± 20
- 30
- 28
- 30
- 120
- 27
36.5
56
18.5
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
85
°C/W
RthJC
2.7
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-0316-Rev. A, 27-Feb-12
1
Document Number: 63658
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
1 page www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQJ951EP
Vishay Siliconix
2
1
Duty Cycle = 0.5
IDM Limited
100
Limited by RDS(on)*
10
1
1 ms
10 ms
100 ms
1 s, 10 s, DC
0.1 TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-0316-Rev. A, 27-Feb-12
5
Document Number: 63658
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SQJ951EP.PDF ] |
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