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PDF SQJ960EP Data sheet ( Hoja de datos )
| Número de pieza | SQJ960EP | |
| Descripción | Automotive Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQJ960EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A) per leg
Configuration
PowerPAK® SO-8L Dual
60
0.036
0.046
8
Dual
6.15 mm
5.13 mm
D
2
4
G2
3
S2
2
G1 1
S1
D
1
Bottom View
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualified
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ960EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
LIMIT
60
± 20
8
8
8
32
16
12
34
11
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
85
°C/W
RthJC
4.3
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection..
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-2275-Rev. C, 24-Sep-12
1
Document Number: 67017
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID Limited
10
100 μs
1
Limited by RDS(on)*
1 ms
10 ms
100 ms 1 s
10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQJ960EP
Vishay Siliconix
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
Notes:
PDM
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2275-Rev. C, 24-Sep-12
5
Document Number: 67017
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SQJ960EP.PDF ] | |
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