|
|
PDF SQJ850EP Data sheet ( Hoja de datos )
| Número de pieza | SQJ850EP | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SQJ850EP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.vishay.com
SQJ850EP
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
PowerPAK® SO-8L Single
60
0.023
0.032
24
Single
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
4
G
3
S
2
S
1
S
D
5.13 mm
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ850EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
60
± 20
24
17
24
96
15
11
45
15
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
70
°C/W
RthJC
3.3
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2419-Rev. F, 19-Dec-11
1
Document Number: 65280
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQJ850EP
Vishay Siliconix
100
Limited by RDS(on)*
IDM Limited
100 µs
10
ID Limited
1 ms
1 10 ms
100 ms, 1 s, 10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2419-Rev. F, 19-Dec-11
5
Document Number: 65280
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SQJ850EP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SQJ850EP | Automotive N-Channel MOSFET | Vishay |
| SQJ850EP | Automotive N-Channel MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |