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PDF SIA416DJ Data sheet ( Hoja de datos )
| Número de pieza | SIA416DJ | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 100 V (D-S) MOSFET
SiA416DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
100 0.083 at VGS = 10 V
0.130 at VGS = 4.5 V
ID (A)a
11.3
9
Qg (Typ.)
3.5 nC
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Bottom View
Ordering Information:
SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• DC/DC Converters
• Full-Bridge Converters
• For Power Bricks and POL Power
Marking Code
D
Part # code
ARX
XXX
Lot Traceability
and Date code
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
100
± 20
11.3
9
4.8b, c
3.9b, c
15
12
2.9b, c
3
0.45
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36 °C/W
6.5
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63649
For technical questions, contact: [email protected]
www.vishay.com
S12-1765-Rev. A, 23-Jul-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
12
Package Limited
9
6
3
0
0
20
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
15
10
5
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
SiA416DJ
Vishay Siliconix
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63649
For technical questions, contact: [email protected]
www.vishay.com
S12-1765-Rev. A, 23-Jul-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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