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Número de pieza | 2SJ605 | |
Descripción | MOS Field Effect Transistor | |
Fabricantes | Kexin | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SJ605 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! SMD Type
TransistIoCrs
MOS Field Effect Transistors
2SJ605
Features
Super low on-state resistance:
RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A)
RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A)
Low input capacitance
Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A)
Built-in gate protection diode
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11Ggaattee
22Ddrraaiinn
33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current(DC)
ID
Drain Current(pulse) *1
ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage temperature
Tstg
Single Avalanche Current *2
IAS
Single Avalanche Energy *2
EAS
*1. PW 10ìs,Dduty cycle 1%.
*2.Starting Tch=25 ,RG=25Ù,VGS=-20V-0, VDD=-30V
Rating
-60
20
65
200
1.5
150
-55 to +150
-45
203
Unit
V
V
A
A
W
A
mJ
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SJ605.PDF ] |
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