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PDF DZ2J068 Data sheet ( Hoja de datos )

Número de pieza DZ2J068
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
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No Preview Available ! DZ2J068 Hoja de datos, Descripción, Manual

This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J068
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
Features
Excellent rising characteristics of zener current Iz
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Repetitive peak forward current
Total power dissipation *
IFRM
200
PT 200
Junction temperature
Tj 150
Storage temperature
Tstg –55 to +150
Note) *: PT = 200 mW achieved with a printed circuit board.
Unit
mA
mW
°C
°C
Package
Code
SMini2-F5-B
Pin Name
1. Cathode
2. Anode
Marking Symbol: GJ, GU
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage *1, 2, 4
VF IF = 10 mA
VZ IZ = 5 mA
1.0 V
6.46 7.14 V
Zener operating resistance
RZ IZ = 5 mA
20 W
Zener rise operating resistance
RZK IZ = 0.5 mA
60 W
Reverse current
Temperature coefcient of zener voltage *3
IR VR = 4 V
SZ IZ = 5 mA
0.1 mA
3.2 mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current ow.
*3: Tj = 25°C to 150°C
*4: Rank classication
Code
M0
Rank
M No-rank
VZ
Marking Symbol
6.64 to 6.98
GU
6.46 to 7.14
GJ
Publication date: November 2009
ZKE00056BED
1
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