|
|
Número de pieza | IXTH30N60L2 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXTH30N60L2 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Preliminary Technical Information
Linear L2TM Power
MOSFET with extended
FBSOA
IXTH30N60L2
IXTQ30N60L2
IXTT30N60L2
VDSS = 600V
ID25 = 30A
≤RDS(on) 240mΩ
N-Channel Enhancement Mode
Avalanche rated
TO-247
Symbol
VDSS
V
DGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
T
J
TJM
Tstg
T
L
T
SOLD
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GS
=
1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.063in) from case for 10s
Plastic body for 10s
Mounting torque (TO-247&TO-3P)
TO-247
TO-3P
TO-268
Maximum Ratings
600
600
V
V
±20 V
±30 V
30 A
80 A
30 A
2J
540 W
-55 to +150
+150
-55 to +150
°C
°C
°C
300 °C
260 °C
1.13/10
Nm/lb.in.
6.0 g
5.5 g
4.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
I
DSS
R
DS(on)
V =V
DS DSS
VGS = 0V
TJ = 125°C
V = 10V, I = 0.5 • I , Note 1
GS D D25
Characteristic Values
Min. Typ. Max.
600 V
2.5 4.5 V
±100 nA
50 μA
300 μA
240 mΩ
TO-3P
(TAB)
G
DS
TO-268
(TAB)
GS
(TAB)
G = Gate
D = Drain
S = Source TAB = Drain
Features
z Designed for linear operation
z International standard packages
z Avalanche rated
z Molding epoxies meet UL 94 V-0
flammability classification
z Guaranteed FBSOA at 75°C
Applications
z Solid state circuit breakers
z Soft start controls
z Linear amplifiers
z Programmable loads
z Current regulators
© 2009 IXYS CORPORATION, All rights reserved
DS100101(01/09)
Free Datasheet http://www.datasheet4u.com/
1 page Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
100.0
RDS(on) Limit
25µs
100µs
10.0
1ms
1.0
TJ = 150ºC
TC = 25ºC
Single Pulse
0.1
10
100
VDS - Volts
10ms
100ms
DC
1000
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
100.0
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 75ºC
RDS(on) Limit
25µs
100µs
10.0
1ms
1.0
TJ = 150ºC
TC = 75ºC
Single Pulse
0.1
10
100
VDS - Volts
10ms
100ms
DC
1000
© 2009 IXYS CORPORATION, All rights reserved
IXYS REF: T_30N60L2(8R)01-20-09-A
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXTH30N60L2.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXTH30N60L2 | Power MOSFET ( Transistor ) | IXYS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |