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PDF BSZ042N04NSG Data sheet ( Hoja de datos )
| Número de pieza | BSZ042N04NSG | |
| Descripción | n-Channel Power MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSZ042N04NS G
Product Summary
V DS
R DS(on),max
ID
40 V
4.2 mΩ
40 A
PG-TSDSON-8
Type
BSZ042N04NS G
Package
Marking
PG-TSDSON-8 042N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=20 A, R GS=25 Ω
Value
40
40
160
20
150
±20
Unit
A
mJ
V
Rev. 1.3
page 1
2009-11-05
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
10 V
250
200
150
100
50
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
BSZ042N04NS G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
18
16
7V
6.5 V
14
5V
12
10
5.5 V
6V
5.5 V
5V
3
8
6 6V
6.5 V
7V
4
10 V
2
0
0 10 20 30 40 50 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
180
160
135
120
90
80
150 °C
45
40
25 °C
0
2345678
V GS [V]
0
0
Rev. 1.3
page 5
40 80 120
I D [A]
160
2009-11-05
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSZ042N04NSG.PDF ] | |
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