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PDF BSZ050N03MSG Data sheet ( Hoja de datos )
| Número de pieza | BSZ050N03MSG | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSZ050N03MS G
Product Summary
V DS
R DS(on),max
ID
30 V
V GS=10 V
V GS=4.5 V
4.5 mΩ
5.7
40 A
PG-TSDSON-8
Type
BSZ050N03MS G
Package
Marking
PG-TSDSON-8 050N03M
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=4.5 V, T A=25 °C,
R thJA=60 K/W2)
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=20 A, R GS=25 Ω
Value
40
40
40
40
15
160
20
70
±20
Unit
A
mJ
V
Rev. 1.7
page 1
2009-11-05
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
180
150
10 V
5V
4.5 V
120
90
60
30
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
180
BSZ050N03MS G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
10
3 V 3.2 V
4V
8
6
3.5 V
4
3.2 V
3V
2.8 V
2
0
3 0 10 20 30
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
3.5 V
4V
4.5 V
5V
6V
10 V
40 50
160
150
120
120
90 80
60
30 150 °C
25 °C
40
0
012345
V GS [V]
0
0
Rev. 1.7
page 5
40 80 120
I D [A]
160
2009-11-05
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSZ050N03MSG.PDF ] | |
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