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Número de pieza | BSZ086P03NS3EG | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSZ086P03NS3EG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOSTM P3 Power-Transistor
Features
• single P-Channel in S3O8
• Qualified according JEDEC1) for target applications
• 150 °C operating temperature
• V GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
BSZ086P03NS3E G
Product Summary
V DS
R DS(on),max
ID
-30 V
8.6 mΩ
-40 A
PG-TSDSON-8
Type
Package
BSZ086P03NS3E G PG-TSDSON-8
Marking
086P3N
Lead free
Yes
Halogen free
Yes
Packing
non-dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
I D T C=25 °C
T C=70 °C
I D,pulse
T A=25 °C2)
T C=25 °C3)
E AS I D=-20 A, R GS=25 Ω
V GS
P tot T A=25 °C
T A=25 °C2)
T j, T stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
-40
-40
-13.5
-160
105
±25
69
2.1
-55 … 150
3 (>= 4 kV)
260
55/150/56
Unit
A
mJ
V
W
°C
°C
Rev. 2.02
page 1
2009-11-16
Free Datasheet http://www.datasheet4u.com/
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
40
-10 V
-5.0 V
30
20
10
0
012
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
BSZ086P03NS3E G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
-4.5 V
40
35
-4.0 V
30
-4.2V
25
20
-4.5 V
-4.0 V
15
10
-3.7 V
-3.5 V
3
5
0
0 10 20
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
-5.0 V
-6V
-10 V
30 40
60
50
40 40
30
20 20
25 °C
150 °C
10
0
0123456
-V GS [V]
0
0
Rev. 2.02
page 5
10 20
-I D [A]
30
2009-11-16
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BSZ086P03NS3EG.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSZ086P03NS3EG | Power MOSFET ( Transistor ) | Infineon |
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