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Número de pieza | BSZ100N06LS3G | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSZ100N06LS3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSZ100N06LS3 G
Product Summary
V DS
R DS(on),max
ID
BSZ100N06LS3 G
60 V
10 mΩ
20 A
Package
PG-TSDSON-8
Marking
100N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C2)
20 A
V GS=10 V, T C=100 °C
20
V GS=4.5 V, T C=25 °C
20
V GS=4.5 V,
T C=100 °C
20
V GS=10 V, T A=25 °C,
R thJA=60 K/W3)
11
Pulsed drain current4)
I D,pulse T C=25 °C
80
Avalanche energy, single pulse5) E AS I D=20 A, R GS=25 Ω
55 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=2.5 K/W the chip is able to carry 55 A.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) See figure 3 for more detailed information
5) See figure 13 for more detailed information
Rev. 2.3
page 1
2009-11-11
Free Datasheet http://www.datasheet4u.com/
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
80
10 V
6V
5V
4.5 V
70
60
50
40
30
20
10
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
BSZ100N06LS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
24
22
3.2 V
3.5 V
4V
20
18
4V
16
14 4.5 V
3.5 V
3.2 V
3V
12
10
8
6
4
2
5V
6V
10 V
0
3 0 20 40 60 80
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
80
60
60
40
40
20
150 °C
25 °C
20
0
012345
V GS [V]
0
0
Rev. 2.3
page 5
20 40 60
I D [A]
80
2009-11-11
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BSZ100N06LS3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSZ100N06LS3G | Power MOSFET ( Transistor ) | Infineon |
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