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PDF BSZ440N10NS3G Data sheet ( Hoja de datos )
| Número de pieza | BSZ440N10NS3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS™3 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ440N10NS3 G
Product Summary
V DS
R DS(on),max
ID
100 V
44 mΩ
18 A
PG-TSDSON-8
Type
BSZ440N10NS3 G
Package
PG-TDSON-8
Marking
440N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=12 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
18
11
5.3
72
17
±20
29
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.0
page 1
2010-04-26
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
50
40 10 V
7V
30
6V
20 5.5 V
5V
10
4.5 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
40
BSZ440N10NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
70
5V
60
5.5 V
6V
7V
50
40
10 V
30
20
10
0
3 0 10 20 30 40 50 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
25
30
20
20 15
10
0
0
Rev. 2.0
10
150 °C
25 °C
24
V GS [V]
5
0
60
page 5
5 10 15 20 25 30
I D [A]
2010-04-26
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSZ440N10NS3G.PDF ] | |
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