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부품번호 | SI8261 기능 |
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기능 | 4.0 A ISOLATED GATE DRIVERS | ||
제조업체 | Silicon Laboratories | ||
로고 | |||
전체 42 페이지수
Si826x
5 KV LED EMULATOR INPUT, 4.0 A ISOLATED GATE DRIVERS
Features
Pin-compatible, drop-in upgrades for Robust protection features
popular high speed opto-coupled
Multiple UVLO ordering options
gate drivers
(5, 8, and 12 V) with hysteresis
Low power diode emulator simplifies 60 ns propagation delay,
design-in process
independent of input drive current
0.6 and 4.0 Amp peak output drive Wide VDD range: 5 to 30 V
current
3.75 and 5 kV reinforced isolation
Rail-to-rail output voltage
UL, CSA, VDE
Performance and reliability
AEC-Q100 qualified
advantages vs. opto-drivers
Wide operating temperature range
Resistant to temperature and age –40 to +125 °C
10x lower FIT rate for longer
service life
RoHS-compliant packages
14x tighter part-to-part matching
SOIC-8 (Narrow body)
DIP8 (Gull-wing)
Higher common-mode transient
SDIP6 (Stretched SO-6)
immunity: >50 kV/µs typical
LGA8
Applications
IGBT/ MOSFET gate drives
Industrial, HEV and renewable
energy inverters
AC, Brushless and DC motor
controls and drives
Variable speed motor control in
consumer white goods
Isolated switch mode and UPS
power supplies
Safety Regulatory Approvals (Pending)
UL 1577 recognized
VDE certification conformity
Up to 5000 Vrms for 1 minute
IEC60747-5-2/VDE0884 Part 10
CSA component notice 5A approval
(basic/reinforced insulation)
IEC 60950-1, 61010-1, 60601-1 CQC certification approval
(reinforced insulation)
GB4943.1
Description
The Si826x isolators are pin-compatible, drop-in upgrades for popular opto-
coupled gate drivers, such as 0.6 A ACPL-0302/3020, 2.5 A HCPL-3120/ACPL-
3130, HCNW3120/3130, and similar opto-drivers. The devices are ideal for driving
power MOSFETs and IGBTs used in a wide variety of inverter and motor control
applications. The Si826x isolated gate drivers utilize Silicon Laboratories'
proprietary silicon isolation technology, supporting up to 5.0 kVRMS withstand
voltage per UL1577. This technology enables higher-performance, reduced
variation with temperature and age, tighter part-to-part matching, and superior
common-mode rejection compared to opto-coupled gate drivers. While the input
circuit mimics the characteristics of an LED, less drive current is required,
resulting in higher efficiency. Propagation delay time is independent of input drive
current, resulting in consistently short propagation times, tighter unit-to-unit
variation, and greater input circuit design flexibility. As a result, the Si826x series
offers longer service life and dramatically higher reliability compared to opto-
coupled gate drivers.
Pin Assignments:
See page 24
1
ANODE 2
CATHODE 3
e
UVLO
8 VDD
7 VO
6 VO
NC 4
5 GND
SOIC-8, DIP8, LGA8
Industry Standard Pinout
ANODE 1
NC 2
e
CATHODE 3
6 VDD
UVLO
5 VO
4 GND
SDIP6
Industry Standard Pinout
Patent pending
Preliminary Rev. 0.9 4/13
Copyright © 2013 by Silicon Laboratories
Si826x
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Free Datasheet http://www.datasheet4u.com/
Si826x
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Supply Voltage
Input Current
Operating Temperature (Ambient)
Symbol
VDD
IF(ON)
TA
Min
Typ
Max
Unit
5 — 30 V
6 — 30 mA
–40 — 125 °C
Table 2. Electrical Characteristics 1
VDD = 15 V or 30 V, GND = 0 V, IF = 6 mA, TA = –40 to +125 °C; typical specs at 25 °C
Parameter
Symbol
Test Conditions
Min Typ Max Units
DC Parameters
Supply Voltage2
Supply Current (Output High)
Supply Current (Output Low)
Input Current Threshold
Input Current Hysteresis
Input Forward Voltage (OFF)
VDD
IDD
IDD
IF(TH)
IHYS
VF(OFF)
(VDD – GND)
IF = 10 mA
VDD = 15 V
VDD = 30 V
VF = –0.3 to +1.5 V
VDD = 15 V
VDD = 30 V
Measured at ANODE with
respect to CATHODE.
5 — 30 V
— 1.8 2.4 mA
— 2.0 2.7 mA
— 1.5 2.1 mA
— 1.7 2.4 mA
6 — — mA
— 0.34 — mA
—— 1V
Input Forward Voltage (ON)
VF(ON)
Measured at ANODE with
respect to CATHODE.
1.6 — 2.8 V
Input Capacitance
CI f = 100 kHz,
VF = 0 V,
— 15 — pF
VF = 2 V
— 15 —
Output Resistance High
(Source)3
Output Resistance Low (Sink)3
Si826xAxx devices
—
ROH
Si826xBxx devices (IOH = -1 A)
—
Si826xAxx devices
—
ROL
Si826xBxx devices (IOL = 2 A) —
15 —
2.6 5.1
5.0 —
0.8 2.0
Notes:
1. See "8.Ordering Guide" on page 25 for more information.
2. Minimum value of (VDD - GND) decoupling capacitor is 1 µF.
3. Both VO pins are required to be shorted together for 4.0 A compliance.
4. When performing this test, it is recommended that the DUT be soldered to avoid trace inductances, which may cause
over-stress conditions.
4 Preliminary Rev. 0.9
Free Datasheet http://www.datasheet4u.com/
4페이지 Si826x
INPUT
VDD
IN Si826x OUT
VSS
VDD = 15 V
SCHOTTKY
1 µF
Measure
50 ns
IF
200 ns
GND
INPUT WAVEFORM
1 µF
CER
10 µF
EL
RSNS
0.1
Figure 1. IOL Sink Current Test Circuit
10
100 µF
9V
+
_
INPUT
Measure
50 ns
IF
200 ns
GND
INPUT WAVEFORM
VDD
IN Si826x OUT
VSS
VDD = 15 V
SCHOTTKY
1 µF
1 µF
CER
10 µF
EL
RSNS
0.1
Figure 2. IOH Source Current Test Circuit
10
100 µF 5.5 V
+
_
Preliminary Rev. 0.9
7
Free Datasheet http://www.datasheet4u.com/
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SI8261 | 4.0 A ISOLATED GATE DRIVERS | Silicon Laboratories |
SI826X | 4.0 A ISOLATED GATE DRIVERS | Silicon Laboratories |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |