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PDF NTTFS3A08P Data sheet ( Hoja de datos )
| Número de pieza | NTTFS3A08P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTTFS3A08P
Product Preview
Power MOSFET
−20 V, −14 A, Single P−Channel, m8FL
Features
• Ultra Low RDS(on) to Minimize Conduction Losses
• m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
Conduction
• ESD Protection Level of 5 kV per JESD22−A114
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Battery/Switch
• High Side Load Switch
• Optimized for Power Management Applications for Portable
Products such as Media Tablets, Ultrabook PCs and Cellphones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±8 V
−14 A
−10
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
Power Dissipation
RqJA ≤ 10 s (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−20 A
−15
4.5 W
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
−9 A
−6
0.84 W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
−43 A
Operating Junction and Storage Temperature
TJ, −55 to °C
Tstg +150
ESD (HBM, JESD22−A114)
VESD
5000
V
Source Current (Body Diode)
IS −6 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) MAX
6.7 mW @ −4.5 V
9.0 mW @ −2.5 V
ID MAX
−14 A
P−Channel MOSFET
G
D
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S XXXX D
S AYWWG D
GGD
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS3A08PTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS3A08PTWG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. P0
1
Publication Order Number:
NTTFS3A08P/D
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet NTTFS3A08P.PDF ] | |
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