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PDF 2SD1163 Data sheet ( Hoja de datos )

Número de pieza 2SD1163
Descripción Silicon NPN Triple Diffused
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! 2SD1163 Hoja de datos, Descripción, Manual

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/

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2SD1163 pdf
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Typical Output Characteristics
1.0
12
10 TC = 25°C
0.8
8
0.6 6
0.4 4
0.2 2 mA
IB = 0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SD1163, 2SD1163A
Area of Safe Operation
50
30 (40 V, 20 A)
10
3
1.0
(120 V, 0.9 A)
0.3 (150 V, 0.5 A)
2SD1163 2SD1163A
0.01
(350 V, 5 mA)
10 30 100 300 1,000
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
500
VCE = 5 V
200
100 TC = 75°C
50 25°C
–25°C
20
10
5
0.1 0.2
0.5 1.0 2
5
Collector current IC (A)
10
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