(PDF) 2SD1163A Datasheet - NPN Silicon Epitaxial Power Transistor

Número de pieza	2SD1163A
Descripción	NPN Silicon Epitaxial Power Transistor
Fabricantes	Thinki Semiconductor
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No Preview Available ! 2SD1163/2SD1163A ® 2SD1163/2SD1163A Pb Pb Free Plating Product NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 9.90±0.20 φ3.60±0.20 4.50±0.20 1.30±0.20 COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 1.27±0.20 1.52±0.20 2.40±0.20 1 23 TO-220C 2.54typ 2.54typ Package Dimension 0.80±0.20 0.50±0.20 Dimensions in Millimeters Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SD1163 2SD1163A Open emitter VCEO Collector-emitter voltage 2SD1163 2SD1163A Open base VEBO Emitter-base voltage Open collector IC Collector current ICM Collector current-peak IC(surge) Collector current-surge PC Collector power dissipation TC=25 Tj Junction temperature Tstg Storage temperature VALUE 300 350 120 150 6 7 10 20 40 150 -55~150 UNIT V V V A A A W © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF 2SD1163A Data sheet ( Hoja de datos )