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2SD1113 PDF 데이터시트 ( Data , Function )

부품번호 2SD1113 기능
기능 Silicon NPN Triple Diffused
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2SD1113 데이터시트, 핀배열, 회로
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
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2SD1113 pdf, 반도체, 판매, 대치품
2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
Symbol
V(BR)CBO
VCEO(sus)
V(BR)EBO
I CEO
hFE
VCE(sat)
VBE(sat)
t on
t off
Min
300
300
7
500
Typ
2.0
23
Max Unit
500 V
—V
—V
100 µA
1.5 V
2.0 V
µs
µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB1 = –IB2 = 40 mA
IC = 4 A, IB1 = –IB2 = 40 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
50
iC (peak)
10
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
0.01
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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