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부품번호 | 2SD1113K 기능 |
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기능 | Silicon NPN Triple Diffused | ||
제조업체 | Renesas | ||
로고 | |||
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/
2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
Symbol
V(BR)CBO
VCEO(sus)
V(BR)EBO
I CEO
hFE
VCE(sat)
VBE(sat)
t on
t off
Min
300
300
7
—
500
—
—
—
—
Typ
—
—
—
—
—
—
—
2.0
23
Max Unit
500 V
—V
—V
100 µA
—
1.5 V
2.0 V
— µs
— µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE = ∞
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB1 = –IB2 = 40 mA
IC = 4 A, IB1 = –IB2 = 40 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
50
iC (peak)
10
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
0.01
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
Free Datasheet http://www.datasheet4u.com/
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 2SD1113K.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SD1113 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SD1113 | Silicon NPN Triple Diffused | Hitachi Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |